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FLM8596-4F
X, Ku-Band Internally Matched FET FEATURES
* * * * * * * High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: add = 29% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed
DESCRIPTION
The FLM8596-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 25.0 -65 to +175 175 Unit V V W C C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with gate resistance of 100.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IA Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G IM3 Rth Tch f = 9.6 GHz, f = 10 MHz 2-Tone Test Pout = 25.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.65 IDSS (Typ.), f = 8.5 ~ 9.6 GHz, ZS=ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS =1100mA VDS = 5V, IDS = 85mA IGS = -85A Min. -0.5 -5.0 35.5 6.5 -42 Limit Typ. Max. 1700 2600 1700 -1.5 36.0 7.5 -3.0 Unit mA mS V V dBm dB mA % dB dBc C/W C
1100 1300 29 -45 5.0 0.6 6.0 80
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1 August 2004
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FLM8596-4F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
30
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V f1 = 9.6 GHz f2 = 9.61 GHz 2-tone test
Pout 28 26 IM3 24 22 -35 -45 -15 -25
Total Power Dissipation (W)
Output Power (S.C.L.) (dBm)
24
32 30
18
6
0
50
100
150
200 16 18 20 22 24
Case Temperature (C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
VDS=10V P1dB Output Power (dBm)
Pin=30dBm 27dBm 25dBm
OUTPUT POWER vs. INPUT POWER
VDS=10V f = 9.05 GHz
Pout
39
Output Power (dBm)
37 35 33 31 29 27 25
37 35 33 31 29 27 8.5 9.0
22dBm
40 add 30 20 10
19dBm
9.5
Frequency (GHz)
19 21 23 25 27 29
Input Power (dBm)
2
add (%)
IM3 (dBc)
12
FLM8596-4F
X, Ku-Band Internally Matched FET
+j50 +j25
9.0 8.8 9.2 9.4 9.6 8.6 8.5 9.7 GHz 20 50 100 9.7 GHz 250 0.2 0.1 3
+j100
4
+j10
+j250
8.4
2 1
8.5 8.6 8.8 9.0 9.2
SCALE FOR |S21|
S11 S22
+90
S21 S12
0
8.4 9.6 9.4 9.2
180
8.4 8.5 8.6 8.8 9.0
SCALE FOR |S12|
9.7 GHz 9.6 9.4
0
-j10
9.0 8.8 8.6 8.5
-j250
8.4 9.7 GHz 9.6 9.4 9.2
-j25 -j50
-j100 -90
FREQUENCY (MHZ)
8400 8500 8600 8700 8800 8900 9000 9100 9200 9300 9400 9500 9600 9700
S11 MAG
.623 .620 .622 .622 .625 .630 .632 .638 .637 .638 .635 .631 .621 .611
ANG
173.4 161.3 149.2 137.0 124.6 112.4 100.7 89.3 78.3 68.0 57.9 48.3 38.5 28.9
S-PARAMETERS VDS = 10V, IDS = 1100mA S21 S12 MAG ANG MAG ANG
2.538 2.602 2.664 2.708 2.748 2.763 2.767 2.764 2.750 2.729 2.718 2.695 2.682 2.675 23.8 14.2 4.4 -5.5 -15.8 -25.9 -36.1 -46.2 -56.1 -65.8 -75.6 -85.1 -94.8 -104.2 .062 .059 .056 .052 .046 .042 .040 .037 .036 .037 .038 .040 .044 .048 97.5 86.1 72.2 58.5 42.4 26.6 10.2 -9.2 -28.0 -49.4 -68.2 -85.7 -103.1 -117.1
S22 MAG
.592 .588 .577 .560 .548 .521 .498 .485 .465 .450 .437 .420 .408 .401
ANG
-63.5 -72.3 -81.1 -90.2 -99.7 -109.8 -120.3 -130.2 -141.5 -152.2 -162.7 -174.5 175.8 164.1
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FLM8596-4F
X, Ku-Band Internally Matched FET
Case Style "IA" Metal-Ceramic Hermetic Package
1.5 Min. (0.059) 1 2-R 1.250.15 (0.049) 0.1 (0.004) 4 2 3 0.5 (0.020) 1.5 Min. (0.059) 1.80.15 (0.071) 3.2 Max. (0.126) 8.1 (0.319) 0.2 Max. (0.008) 1.15 (0.045) 9.70.15 (0.382)
13.00.15 (0.512) 16.50.15 (0.650)
1. 2. 3. 4.
Gate Source (Flange) Drain Source (Flange)
Unit: mm(inches)
For further information please contact:
CAUTION
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Eudyna Devices USA Inc.
2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111
www.us.eudyna.com
* Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Eudyna Devices Europe Ltd.
Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd. Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921
Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2004 Eudyna Devices USA Inc. Printed in U.S.A.
Eudyna Devices Inc.
Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170
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